| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DF2G0007-16N | DFN 6mm×5mm | 30~700 | 16.0 | 40.5 | 67.0 | 18.8 | Engineering Sample | |
| DF1G0010-16N | DFN 6mm×5mm | 20~1000 | 16.0 | 40.6 | 55.0 | 12.6 | Engineering Sample | |
| DXG1PH60B-10N2* | DFN 4mm×4mm | DC~6000 | 10.0 | 34.0 | 32.0 | 20.0 | Released Product | |
| DXG1PH22A-120N* | DFN 7mm×10mm | 1805~2170 | 50.8 | 42.3 | 55.5 | 14.6 | Released Product | |
| DXG2PH27A-100N* | DFN 7mm×6.5mm | 2496~2690 | 49.9 | 41.3 | 56.5 | 15.9 | Released Product | |
| DXG2PH36A-70N* | DFN 7mm×6.5mm | 3300~3800 | 48.1 | 39.3 | 53.5 | 15.4 | Released Product | |
| DXG2PH36A-100N* | DFN 7mm×6.5mm | 3300~3800 | 50.2 | 41.3 | 54.3 | 15.8 | Released Product | |
| DXG2PH50B-20N* | DFN 4mm×4.5mm | 4400~5000 | 42.8 | 47.8 | 37.0 | 16.0 | In Development | |
| DXG2PH50A-90N* | DFN 7mm×6.5mm | 4800~5000 | 49.6 | 41.3 | 48.3 | 12.5 | In Development | |
| DXG2PH60B-14N* | DFN 4mm×4.5mm | DC~6000 | 42.2 | / | 41.8 | 15.4 | Released Product | |
| DXG1PH60P-40N | DFN 7mm×6.5mm | DC~6000 | 46.3 | 33.0 | 31.7 | 21.3 | Released Product | |
| DXG1PH60P-60N* | DFN 7mm×6.5mm | DC~6000 | 47.8 | 40.0 | 55.0 | 19.5 | Released Product |
DF2G0007-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 30 to 700 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 30 | MHz |
Frequency (Max.) | 700 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @325MHz | 41.1 | dBm |
Power Gain @ 325 MHz | 19.4 | dB |
Efficiency @ 325 MHz | 69.5 | % |
Note: Measured in the DF2G0007-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pout=39dBm，Pulse width = 100 μs, Duty cycle = 10 %.
DF1G0010-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 20 | MHz |
Frequency (Max.) | 1000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @325MHz (Typ.) | 41.2 | dBm |
Power Gain @ 325 MHz | 15 | dB |
Efficiency @ 325 MHz | 72 | % |
Note: Measured in the DF1G0010-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Input signal is CW
DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 40.3 | dBm |
Power Gain @ 3500 MHz | 20.2 | dB |
Efficiency @ 3500 MHz | 32.3 | % |
Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.
DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 1805 | MHz |
| Frequency (Max.) | 2170 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 50.8 | dBm |
| Power Gain @ 2110 MHz | 14.6 | dB |
| Efficiency @ 2110 MHz | 55.5 | % |
| ACPR @ 2100 MHz | -35.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.9 | dBm |
| Power Gain @ 2600 MHz | 15.9 | dB |
| Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 48.1 | dBm |
Power Gain @ 3500 MHz | 15.4 | dB |
Efficiency @ 3500 MHz | 53.5 | % |
| ACPR @ 3500 MHz | -31.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 50.2 | dBm |
Power Gain @ 3500 MHz | 15.8 | dB |
Efficiency @ 3500 MHz | 54.3 | % |
ACPR @ 3500 MHz | -32.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 4400 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 42.8 | dBm |
| Power Gain @ 4900 MHz | 16.0 | dB |
| Efficiency @ 4900 MHz | 47.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 4800 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.6 | dBm |
| Power Gain @ 4880 MHz | 12.5 | dB |
| Efficiency @ 4880 MHz | 48.3 | % |
| ACPR @ 4880 MHz | -32.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 42.2 | dBm |
Power Gain @ 3500 MHz | 15.4 | dB |
Efficiency @ 3500 MHz | 41.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.
DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station
applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 46.3 | dBm |
Power Gain @ 1842 MHz | 21.3 | dB |
Efficiency @ 1842 MHz | 31.7 | % |
ACPR @ 1842 MHz | -41.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station
applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 47.8 | dBm |
Power Gain @ 1842 MHz | 19.5 | dB |
Efficiency @ 1842 MHz | 55.0 | % |
ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
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