| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DF2G5060-140EF2 | 780P2 | 5000~6000 | 140 | 50.5 | 54.2 | 9.5 | Engineering Sample | |
| DF2G4460-50DF2 | 360F1 | 4400~6000 | 50.0 | 47.7 | 60.8 | 8.9 | Engineering Sample | |
| DF2G4460-30DF2 | 360F1 | 4400~6000 | 30.0 | 45.5 | 58.9 | 9.2 | Engineering Sample | |
| DF2G0007-16N | DFN 6mm×5mm | 30~700 | 16.0 | 40.5 | 67.0 | 18.8 | Engineering Sample | |
| DF1G0010-16N | DFN 6mm×5mm | 20~1000 | 16.0 | 40.6 | 55.0 | 12.6 | Engineering Sample | |
| DF2H0014-350EF | 780P2 | DC~1400 | 350 | 55.8 | 67.0 | 18.2 | Engineering Sample | |
| DF2G1020-120CF | 400P1 | 1000~2000 | 120 | 51.0 | 69.0 | 19.3 | Engineering Sample | |
| DF2G0060-25DF | 200F1 | DC~6000 | 25.0 | 45.7 | 78.0 | 12.8 | Engineering Sample | |
| DF2G0040-35DF | 360F1 | DC~4000 | 35.0 | 47.2 | 67.2 | 14.2 | Engineering Sample | |
| DF2G0040-45DF | 360F1 | DC~4000 | 45.0 | 48.2 | 70.6 | 12.1 | Engineering Sample | |
| DF2G0026-330FF | 650F2 | DC~2600 | 330 | 53.1 | 74.6 | 15.1 | Engineering Sample | |
| DF2G0030-180FF | 650F2 | DC~3000 | 180 | 51.6 | 81.0 | 16.4 | Engineering Sample | |
| DF2G0030-120DF | 360F1 | DC~3000 | 120 | 51.0 | 75.9 | 13.9 | Engineering Sample | |
| DF2G0040-90DF | 360F1 | DC~4000 | 90.0 | 51.0 | 80.6 | 14.8 | Engineering Sample | |
| DF2G0060-10DF | 200F1 | DC~6000 | 10.0 | 42.1 | 77.2 | 17.5 | Engineering Sample | |
| DXG1CH59B-30DF | 360F1 | 5000~6000 | 35.0 | 55.0 | 30.0 | 16.0 | Released Product | |
| DF2G0040-45CF | 360P1 | DC~4000 | 45.0 | 48.2 | 70.6 | 12.1 | Engineering Sample | |
| DF2G0030-120CF | 360P1 | DC~3000 | 120 | 51.0 | 75.9 | 13.9 | Engineering Sample | |
| DF2H0026-650FF | 650F2 | DC~2600 | 650 | 56.0 | 62.9 | 24.5 | Engineering Sample | |
| DF2H0014-175DF | 400F1 | DC~1400 | 175 | 52.8 | 67.0 | 18.2 | Engineering Sample |
DF2G5060-140EF2 is a 140 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 5000 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @ 5000 MHz | 50.5 | dBm |
Power Gain @ 5000 MHz | 9.7 | dB |
Efficiency @ 5000 MHz | 63.3 | % |
Note: Measured in the DF2G5060-140EF2 application circuit, test condition: VDS = 28 V, IDQ = 100 mA.
DF2G4460-50DF2 is a 50 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4400 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @ 5700 MHz | 48.1 | dBm |
Power Gain @ 5700 MHz | 9.4 | dB |
Efficiency @ 5700 MHz | 61.0 | % |
Note: Measured in the DF2G440-50DF2 application circuit, test condition: VDS = 28 V, IDQ = 400 mA.
DF2G4460-30DF2 is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4400 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @ 5500 MHz | 46.0 | dBm |
Power Gain @ 5500 MHz | 9.5 | dB |
Efficiency @ 5500 MHz | 66.6 | % |
Note: Measured in the DF2G440-30DF2 application circuit, test condition: VDS = 28 V, IDQ = 200 mA,
DF2G0007-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 30 to 700 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 30 | MHz |
Frequency (Max.) | 700 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @325MHz | 41.1 | dBm |
Power Gain @ 325 MHz | 19.4 | dB |
Efficiency @ 325 MHz | 69.5 | % |
Note: Measured in the DF2G0007-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pout=39dBm，Pulse width = 100 μs, Duty cycle = 10 %.
DF1G0010-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 20 | MHz |
Frequency (Max.) | 1000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @325MHz (Typ.) | 41.2 | dBm |
Power Gain @ 325 MHz | 15 | dB |
Efficiency @ 325 MHz | 72 | % |
Note: Measured in the DF1G0010-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Input signal is CW
DF2H0014-350EF is a 350 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1400 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 990 MHz | 55.8 | dBm |
Power Gain2 @ 990 MHz | 18.2 | dB |
Efficiency2@ 990 MHz | 67 | % |
Note: Measured in the DF2H0014-350DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.
1. The output power is saturated power.
2. Test condition: Based on Pout. = 350 W.
DF2G1020-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1000 to 2000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 1800 MHz | 51 | dBm |
Power Gain2 @ 1800 MHz | 19.3 | dB |
Efficiency2@ 1800 MHz | 69 | % |
Note: Measured in the DF2G1020-120CF application circuit, test condition: VDS = 28 V, IDQ = 450 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2G0060-25DF is a 25 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 2600 MHz | 45.7 | dBm |
Power Gain2 @ 2600 MHz | 12.8 | dB |
Efficiency2@ 2600 MHz | 78 | % |
Note: Measured in the DF2G0060-25DF application circuit, test condition: VDS = 28 V, IDQ = 80 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2G0040-35DF is a 35 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 4000 MHz | 47.2 | dBm |
Power Gain2 @ 4000 MHz | 14.2 | dB |
Efficiency2@ 4000 MHz | 67.7 | % |
Note: Measured in the DF2G0040-35DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2G0040-45DF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 4000 MHz | 48.2 | dBm |
Power Gain2 @ 4000 MHz | 12.1 | dB |
Efficiency2@ 4000 MHz | 70.6 | % |
Note: Measured in the DF2G0040-45DF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2G0026-330FF is a 330 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 2600 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 2500 MHz | 53.1 | dBm |
Power Gain2 @ 2500 MHz | 15.1 | dB |
Efficiency2@ 2500 MHz | 74.6 | % |
Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 28 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on one side Maximum Output Power.
2. Test condition: Based on one side Maximum Drain Efficiency.
DF2G0030-180FF is a 180 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 3000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 2500 MHz | 51.6 | dBm |
Power Gain2 @ 2500 MHz | 16.4 | dB |
Efficiency2@ 2500 MHz | 81.0 | % |
Note: Measured in the DF2G0030-180FF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2G0030-120DF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 3000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 2500 MHz | 51.4 | dBm |
Power Gain2 @ 2500 MHz | 15.3 | dB |
Efficiency2@ 2500 MHz | 82.3 | % |
Note: Measured in the DF2G0030-120DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2G0040-90DF is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 2500 MHz | 51 | dBm |
Power Gain2 @ 2500 MHz | 11.9 | dB |
Efficiency2@ 2500 MHz | 80.6 | % |
Note: Measured in the DF2G0040-90DF application circuit, test condition: VDS = 28 V, IDQ = 400 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2G0060-10DF is a 10 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 2600 MHz | 42.1 | dBm |
Power Gain2 @ 2600 MHz | 17.5 | dB |
Efficiency2@ 2600 MHz | 77.2 | % |
Note: Measured in the DF2G0060-10DF application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DXG1CH59B-30DF is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 5000 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat | 55 | dBm |
Power Gain | 16 | dB |
Efficiency | 30 | % |
Note: Measured in the DXG1CH59B-30DF application circuit, test condition: VDS = 48 V, IDQ = 80 mA, Pavg = 9 W,Pulse width = 100 μs, Duty cycle = 10 %.
DF2G0040-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 4000 MHz | 48.2 | dBm |
Power Gain2 @ 4000 MHz | 12.1 | dB |
Efficiency2@ 4000 MHz | 70.6 | % |
Note: Measured in the DF2G0040-45CF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2G0030-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 3000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2500 MHz | 51.4 | dBm |
Power Gain2 @ 2500 MHz | 15.3 | dB |
Efficiency2@ 2500 MHz | 82.3 | % |
Note: Measured in the DF2G0030-120CF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2H0026-650FF is a 650 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 2600 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 678 MHz | 56 | dBm |
Power Gain2 @ 678 MHz | 24.5 | dB |
Efficiency1@ 678 MHz | 62.9 | % |
Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 48 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. The output power is saturated power.
2. Test condition: Based on rollback gain @ 50 dbm.
DF2H0014-175DF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1400 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 990 MHz | 52.8 | dBm |
Power Gain2 @ 990 MHz | 18.2 | dB |
Efficiency2@ 910 MHz | 67.0 | % |
Note: Measured in the DF2H0014-175DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.
1. The output power is saturated power.
2. Test condition: Based on Pout. = 175W.
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