产品

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
D2H095DE1
DOD1H0015-1800EF 1230P2 915 1800 61.5 79.0 18.0 Released Product
D2H065DE1
D2H065DB1
D2H055DB1
DOD1H2425-600EF 1230P2 2435~2465 600 57.4 73.5 14.7 Released Product
D2H046DA1
D2H042DB1
D2H039DB1
D2H039DA1
D2H025DB1
D2H025DA1
D2H014DA1
D2H010DA1
DXG1PH22A-120N* DFN 7mm×10mm 1805~2170 50.8 42.3 55.5 14.6 Released Product
DXG2PH27A-100N* DFN 7mm×6.5mm 2496~2690 49.9 41.3 56.5 15.9 Released Product
DXG2PH36A-70N* DFN 7mm×6.5mm 3300~3800 48.1 39.3 53.5 15.4 Released Product
DXG2PH36A-100N* DFN 7mm×6.5mm 3300~3800 50.2 41.3 54.3 15.8 Released Product
DXG2PH50B-20N* DFN 4mm×4.5mm 4400~5000 42.8 47.8 37.0 16.0 In Development
DXG2PH50A-90N* DFN 7mm×6.5mm 4800~5000 49.6 41.3 48.3 12.5 In Development

D2H095DE1

Brief description for the product

D2H095DE1

D2H095DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸785*2685mm
应用电压48V
典型功率95W
效率
81%
增益21.0dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 297 mA, 频率 = 2.6 GHz


DOD1H0015-1800EF

Brief description for the product

DOD1H0015-1800EF

DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

DC

MHz

Frequency (Max.)

1500

MHz

Supply Voltage (Typ.)

50

V

Psat (Typ.)

61.5

dBm

Power Gain @ 650 MHz

18.0

dB

Efficiency @ 650 MHz

79.0

%


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQ = 200 mA, test signal is CW.


D2H065DE1

Brief description for the product

D2H065DE1

D2H065DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸880*2000mm
应用电压48V
典型功率65W
效率
82%
增益21.5dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 189 mA, 频率 = 2.6 GHz


D2H065DB1

Brief description for the product

D2H065DB1

D2H065DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸845*1995mm
应用电压48V
典型功率65W
效率
82%
增益21.8dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 193 mA, 频率 = 2.6 GHz


D2H055DB1

Brief description for the product

D2H055DB1

D2H055DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸785*1755mm
应用电压48V
典型功率55W
效率
82%
增益22.0dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 162 mA, 频率 = 2.6 GHz


DOD1H2425-600EF

Brief description for the product

DOD1H2425-600EF

DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2400

MHz

Frequency (Max.)

2500

MHz

Supply Voltage (Typ.)

50

V

Psat (Typ.)

57.4

dBm

Power Gain @ 2450 MHz

14.7

dB

Efficiency @ 2450 MHz

73.5

%


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.


D2H046DA1

Brief description for the product

D2H046DA1

D2H046DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸880*1640mm
应用电压48V
典型功率46W
效率
82%
增益21.3dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 143 mA, 频率 = 2.6 GHz


D2H042DB1

Brief description for the product

D2H042DB1

D2H042DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸785*1515mm
应用电压48V
典型功率42W
效率
82%
增益22.7dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 126 mA, 频率 = 2.6 GHz


D2H039DB1

Brief description for the product

D2H039DB1

D2H039DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸785*1395mm
应用电压48V
典型功率39W
效率
82%
增益22.7dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 116 mA, 频率 = 2.6 GHz


D2H039DA1

Brief description for the product

D2H039DA1

D2H039DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸845*1092mm
应用电压48V
典型功率39W
效率
82%
增益22.1dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 120 mA, 频率 = 2.6 GHz


D2H025DB1

Brief description for the product

D2H025DB1

D2H025DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸685*1035mm
应用电压48V
典型功率25W
效率
82%
增益22.7dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 74 mA, 频率 = 2.6 GHz


D2H025DA1

Brief description for the product

D2H025DA1

D2H025DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸645*825mm
应用电压48V
典型功率25W
效率
82%
增益21.9dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 76 mA, 频率 = 2.6 GHz


D2H014DA1

Brief description for the product

D2H014DA1

D2H014DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸695*568mm
应用电压48V
典型功率14W
效率
83%
增益22.9Db











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 42 mA, 频率 = 2.6 GHz


D2H010DA1

Brief description for the product

D2H010DA1

D2H010DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。

Operating Characteristics

参数值单位
产品尺寸685*570mm
应用电压48V
典型功率10W
效率
83%
增益23.7Db











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 30 mA, 频率 = 2.6 GHz


DXG1PH22A-120N*

Brief description for the product

DXG1PH22A-120N*

DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)1805MHz
Frequency (Max.)2170MHz
Supply Voltage (Typ.)48V
Psat (Typ.) 50.8dBm
Power Gain @ 2110 MHz14.6dB
Efficiency @ 2110 MHz55.5%
ACPR @ 2100 MHz-35.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2PH27A-100N*

Brief description for the product

DXG2PH27A-100N*

DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz. 


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2496MHz
Frequency (Max.)2690MHz
Supply Voltage (Typ.)48V
Psat (Typ.) 49.9dBm
Power Gain @ 2600 MHz15.9dB
Efficiency @ 2600 MHz56.5%
ACPR @ 2600 MHz-32.5dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2PH36A-70N*

Brief description for the product

DXG2PH36A-70N*

DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

3300

MHz

Frequency (Max.)

3800

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

48.1

dBm

Power Gain @ 3500 MHz

15.4

dB

Efficiency @ 3500 MHz

53.5

%

ACPR @ 3500 MHz-31.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2PH36A-100N*

Brief description for the product

DXG2PH36A-100N*

DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

3300

MHz

Frequency (Max.)

3800

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

50.2

dBm

Power Gain @ 3500 MHz

15.8

dB

Efficiency @ 3500 MHz

54.3

%

ACPR @ 3500 MHz

-32.0

dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH50B-20N*

Brief description for the product

DXG2PH50B-20N*

DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4400MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)48V
Psat (Typ.) 42.8dBm
Power Gain @ 4900 MHz16.0dB
Efficiency @ 4900 MHz47.8%

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA,  Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH50A-90N*

Brief description for the product

DXG2PH50A-90N*

DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)4800MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)48V
Psat (Typ.) 49.6dBm
Power Gain @ 4880 MHz12.5dB
Efficiency @ 4880 MHz48.3%
ACPR @ 4880 MHz-32.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

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